epitaxial layer
英
美
外延层；外延生长膜
双语例句
- Method for Measuring Thickness of B-Doped p~+-Si Epitaxial Layer
掺硼p~+-Si外延层厚度的测试方法 - The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.
实验结果证明IGBT的下降时间随着外延层厚度的增加而增加。 - Control of Epitaxial Layer Transition Region on Heavy As-Doped Substrate for Schottky Devices
肖特基器件用重掺As衬底上外延层过渡区控制 - Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology
异质外延GaN薄膜中缺陷对表面形貌的影响 - Also we discuss the relationship between the residual strain and the crystalline quality for an AlN and a GaN epitaxial layer.
我们还讨论了AlN和GaN外延层的结晶质量和残余应力间的关系。 - A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.
MOCVD用高压汞灯对n－GaN处延层进行了辐照湿法化学刻蚀研究，这种外延层是在A12O3衬底上用MOCVD方法生长的。 - The properties of Si epitaxial layer are investigated by XRD, XTEM and spreading resistance techniques. The results show that Si epitaxial growth layer is of good crystallinity and the same orientation with Si substrate and porous silicon layer.
对获得的外延层作了XRD、XTEM和扩展电阻等测量，测量结果表明硅外延层单晶性好，并和硅衬底、多孔硅层具有相同的晶向。 - With the development of MBE and MOCVD growth techniques, high quality super-thin epitaxial material can be grown. So energy band engineering associated with super-thin epitaxial layer has become an important subject.
随着MBE和MOCVD生长技术的发展，已能生长出高质量超薄层的外延材料，使能带工程技术成为目前国内外的热门研究课题。 - GaAs epitaxial layer was grown on GaAs substrate using AsCl_3/ Ga/ H_2 vapour-phase epitaxial system and was made into Au-GaAs Schottky structure.
用AsCl3/Ga/H2气相外延系统在GaAs衬底上生长出GaAs外延层并制成Au-GaAs肖特基结构。 - SiGe material has many unique characteristics. The high performance strained epitaxial layer can introduce the concept of bandgap engineering into the conventional silicon based materials.
SiGe材料具有很多独特的性质，高性能的应变SiGe外延层能够将能带工程的概念引入到传统的S基材料中去。 - The result shows that the purpose of improving this current gain can be realized if the N~+ buried layer is abandoned and a thin epitaxial layer is chosen to increase the current vertically injected into the substrate and to reduce the recombination current in the base.
结果表明，如不采用N~+埋层，但选用适当薄的外延层，使纵向注入衬底的电流增加和使基区复合电流减小，可以实现提高多集电极横向晶体管电流增益的目的。 - A double graded doping drift dominated InP/ GaP photodiode is designed and the affections of the dislocations, which are resulted from the mismatch between the epitaxial layer and the substrate, to the device characterizations are studied.
设计了双梯度掺杂漂移机制InP/GaP光二极管，研究了由于晶体不匹配所造成的缺陷以及这些缺陷对器件性能的影响。 - Controlling Resistivity of the Epitaxial Layer on p-Type Silicon
p型硅外延层电阻率的控制 - The major dopant determines the concentration of impurities in the epitaxial layer and the resistivity of the layer.
主掺杂质控制外延层的杂质浓度，决定外延层的电阻率。 - The Research of the Area Contact Method for Evaluating Epitaxial Layer Resistivity
测定外延层电阻率的面接触方法研究 - The characteristics of the submicron active layers and the interface region in single and multiple epitaxial layer structures are measured and discussed.
测量和讨论了亚微米有源层、单层和多层结构中的界面过渡区的特性。 - A Study of Thin Epitaxial Layer Growth ( 3) thin thickness;
薄层硅外延材料的研究（3）膜的厚度薄； - High Mobility GaAs Intrinsic Epitaxial Layer Grown by MOCVD
高迁移率GaAs本征外延层的MOCVD生长 - Comparative Analysis of Raman Spectra of GaN and GaN: Mg Epitaxial Layer at Low Temperature
GaN和GaN：Mg外延膜低温拉曼谱的对比研究 - Contactless Measurement of Minority Carrier Diffusion Length and Hall Mobility of GaAs and Al_xGa_ ( 1-x) As Epitaxial Layer
GaAs、AlxGa（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测 - The Raman spectroscopy analyses manifest that the epitaxial layer is completely strained.
Raman谱分析结果表明外延层为完全应变的。 - Study of GaP: ZnO LED epitaxial layer by microscopical optical method
用微区光学方法研究GaP：ZnO红光外延片 - When the GaAs epitaxial layer grows on the GaAs ( 110) substrate, there are two growth modes ( monolayer-by-monolayer and bilayer-by-bilayer) under different conditions that correspond to monolayer and bilayer RHEED ( Reflection High Energy Electron Diffraction) oscillations.
GaAs（110）衬底上生长GaAs外延层时，不同生长条件下存在单层和双层两种生长模式，对应反射高能电子衍射RHEED强度振荡呈现出单双周期的变化。 - In this thesis the growth mechanism of high-quality GaP epitaxial layer on2 ° GaAs substrate is discussed.
本论文主要讨论2°GaAs衬底如何生长高质量GaP外延层。 - The method of epitaxial layer growth of the waveguide photodetector, the post-process processing steps and the device testing method have been described in detail.
详细介绍了波导型光探测器的外延片生长方法、后工艺加工步骤以及器件测试方法。 - Based on the simulation results, the thermal stability of multi-finger InGaP/ GaAs HBT with different epitaxial layer designs was discussed, compared with the results derived by theoretical formulas and confirmed them in turn.
基于模拟结果，讨论了结构参数对多发射指InGaP/GaAsHBT器件热稳定性的影响，并与理论公式推导的结论进行了比对和验证。 - Focus on the structural and material parameters of the device, particularly the impact of the channel dimensions and the epitaxial layer parameters on electrical parameters of device.
重点分析了器件的结构参数、材料参数&特别是沟道尺寸和外延层参数等对器件电参数的影响。 - High-resolution x-ray diffractometer is a powerful analysis tool on semiconductor epitaxial layer. Using it people can measure crystal parameter, strain, composition and stress of epitaxial layer.
高分辨力x射线衍射仪是半导体外延层结构分析的有力工具，利用它可以确定外延层的晶格常数、应变结构、组份和应力等。 - The effects of the thickness of high temperature buffer layer, the growth rate of epitaxial layer and the rich Zn environment on the properties of ZnO films grown by AP-MOCVD were investigated.
研究了高温缓冲层厚度、外延层的生长速率以及富Zn环境对ZnO薄膜生长的影响，优化了生长工艺参数。 - The large lattice mismatch between the GaAs substrate and the GaN epitaxial layer, resulting in high-density defects in GaAs epitaxial layer and enhanced non-radioactive, is the reason of low photoluminescence intensity of GaAs.
GaN衬底和GaAs外延层二者之间较大的晶格失配，导致GaAs外延层缺陷密度很高，非辐射复合增强是造成GaAs光致发光强度低的原因。